DMG4800LFG
Ordering Information
(Note 7)
Part Number
DMG4800LFG-7
Case
DFN3030-8
Packaging
3000/Tape & Reel
Notes:
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
DFN3030-8
N48 = Product marking code
YYWW = Date code marking
YY = Last digit of year (ex: 09 for 2009)
N48
WW = Week code 01 to 52
Package Outline Dimensions
A
A3 SEATING PLANE
DFN3030-8
A1
Dim
Min
Max Typ
e
b
R0
.2
00
A
A1
A3
b
0.57  0.63 0.60
0 0.05 0.02
? ? 0.15
0.29  0.39 0.34
D
2.90
3.10 3.00
E
E2
L
D2
e
E
E2
L
2.19 2.39 2.29
? ? 0.65
2.90 3.10 3.00
1.64 1.84 1.74
0.30 0.60 0.45
D2
All Dimensions in mm
D
Suggested Pad Layout
Z
Dimensions Value (in mm)
Z
G
2.59
0.11
X2
DMG4800LFG
Document number: DS31785 Rev. 3 - 2
Y
C
X 1
G
5 of 6
www.diodes.com
X1
X2
Y
C
2.49
0.65
0.39
0.65
November 2009
? Diodes Incorporated
相关PDF资料
DMG4800LK3-13 MOSFET N-CH 30V 10A TO252
DMG4800LSD-13 MOSFET 2N-CH 30V 8.54A SO8
DMG4822SSD-13 MOSFET DL N-CH 30V 10A SO-8
DMG4932LSD-13 MOSFET 2N-CH 30V 9.5A SO8
DMG5802LFX-7 MOSFET N-CH DUAL 24V DFN5020-6
DMG6602SVT-7 MOSFET N/P-CH 30V TSOT23-6
DMG6898LSD-13 MOSFET 2N-CH 20V 9.5A SO8
DMG6968U-7 MOSFET N-CH 20V 6.5A SOT-23
相关代理商/技术参数
DMG4800LK3 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMG4800LK3-13 功能描述:MOSFET ENHANCE MODE MOSFET N Chan 30V/6.5-10.0A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG4800LSD 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMG4800LSD-13 功能描述:MOSFET Dual N-Ch 30V VDSS 25 Vgss 42A IDM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG4800LSDQ-13 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 31V-40V SO-8 T&R 2.5K - Tape and Reel
DMG4812SSS 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
DMG4812SSS-13 功能描述:两极晶体管 - BJT MOSFET BVDSS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
DMG4822SSD 制造商:Diodes Incorporated 功能描述:MOSFET NN CH W DIO 30V 10A SO8 制造商:Diodes Incorporated 功能描述:MOSFET, NN CH, W DIO, 30V, 10A, SO8 制造商:Diodes Incorporated 功能描述:MOSFET, NN CH, W DIO, 30V, 10A, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0134ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.42W ;RoHS Compliant: Yes